http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101295889-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101295889-B1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | A method of manufacturing a semiconductor device for forming a deep hole in a substrate using a photoresist film formed on a substrate as a mask, comprising: an installation step of installing a substrate on which a photoresist film having an opening is formed in an etching chamber, and a photoresist film as a mask And at least SF 6 , O 2, and HBr following the first etching step of plasma etching the substrate provided in the etching chamber using the first mixed gas containing at least SiF 4 and O 2 , and the first etching step. It has a 2nd etching process of plasma-etching a board | substrate using the containing 2nd mixed gas, and forming a hole in a board | substrate. |
| priorityDate | 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.