| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2012-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_383d8f450756a16f0370b4c87f2843c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c634ad3eccfdb29049bd21c6678d59a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a8cc50ce7b79311d14eee05345f709b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26e223a62e166f9a2183b2a58ded92b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2568fc8de2e8c69a0ed71567f2a36c1 |
| publicationDate |
2013-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101266053-B1 |
| titleOfInvention |
Plasma Treatment Method |
| abstract |
The present invention provides a plasma processing method for performing plasma cleaning to plasma-etch a magnetic film, to suppress corrosion of a wafer having a magnetic film, and to efficiently remove deposits in an etching processing chamber in which the magnetic film is plasma-etched. In the plasma processing method of performing plasma etching of the to-be-processed substrate which has a magnetic film in an etching process chamber, the to-be-processed substrate by which the magnetic film was plasma-etched using gas other than the 1st gas containing chlorine, and the magnetic film was plasma-etched. Is removed from the etching process chamber, and the etching process chamber is plasma cleaned, and the plasma cleaning uses a first plasma cleaning for plasma cleaning using a second gas containing chlorine, and a gas containing hydrogen after the first plasma cleaning. And second plasma cleaning for plasma cleaning. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972776-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170081554-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102459874-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101903432-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190017889-A |
| priorityDate |
2011-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |