| abstract |
The present invention relates to a novel zirconium organometallic compound represented by the following formula (1) and a method for preparing the same, and more particularly, can be applied to chemical vapor deposition (CVD) or atomic layer deposition (ALD). The present invention relates to a thermally and chemically stable zirconium organometallic compound and a preparation method thereof. The zirconium organometallic compound synthesized according to the present invention is highly volatile and thermally stable, and thus can be advantageously used to prepare a zirconium metal oxide thin film. (Formula 1) In Chemical Formula 1, R 1 is a C1-C4 alkyl group; R 2 And R 3 independently of one another is an alkyl group of C 1 -C 6. Index words: chemical vapor deposition (CVD), atomic layer deposition (ALD), organometallic compounds, zirconium metal oxides, thin films |