http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101248625-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2009-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101248625-B1 |
| titleOfInvention | Method and apparatus for etching silicon-containing film |
| abstract | <Task> The present invention etches the silicon-containing film of silicon or silicon oxide without residue and at high speed while suppressing etching of the base film. [Solution] In the present invention, a processing gas containing a fluorine-based reaction component and an oxidative reaction component is brought into contact with the object 90 to etch the silicon-containing film 93 on the base film 92. By the flow rate adjusting means 60, the flow rate of the processing gas on the workpiece 90 is changed in accordance with the progress of etching. Preferably, the flow rate of the processing gas is adjusted to change the gas flow rate. More preferably, the flow rate adjusting gas is mixed in the processing gas supply system 10 or the mixing is stopped to adjust the flow rate of the processing gas. |
| priorityDate | 2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.