http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101239160-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101239160-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | In the method of manufacturing a semiconductor device of the present invention, a first insulating film is formed on a substrate, a semiconductor film is formed on the first insulating film, and an electron density is 1 × 10 11 cm −3 or more and 1 × 10 13 cm using a high frequency wave. The semiconductor film is oxidized or nitrided by plasma treatment under a condition of -3 or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, a second insulating film is formed by covering the semiconductor film, and a gate electrode is formed on the second insulating film. Forming a third insulating film by covering the gate electrode, and forming a conductive film on the third insulating film.n n n n Semiconductor, insulating film, electron, oxidation, plasma, gate electrode |
| priorityDate | 2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.