http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101232813-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2010-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101232813-B1 |
| titleOfInvention | Method for exposing through-base wafer vias for fabrication of stacked devices |
| abstract | An effective method is described for forming through-base wafer vias for the fabrication of stacked devices such as electronic devices. The base wafer may be a silicon wafer, in which case the method relates to through-silicon via (TSV) technology. The method provides a high removal rate of silicon under appropriate conditions. |
| priorityDate | 2009-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 101.