http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101196649-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101196649-B1 |
| titleOfInvention | Dry etching apparatus and dry etching method |
| abstract | Provided are a dry etching apparatus and a dry etching method having good in-plane uniformity and high etching rate. A vacuum chamber composed of an upper plasma generating chamber and a lower substrate processing chamber, a magnetic field coil provided outside the sidewall of the plasma generating chamber, and an antenna coil disposed between the magnetic field coil and the outer side of the sidewall and connected to a high frequency power source. And a dry etching apparatus provided with an etching gas introduction means provided above the plasma generation chamber, wherein the sidewall is made of a material having a relative dielectric constant of 4 or more. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200003561-A |
| priorityDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.