http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101141873-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2008-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101141873-B1 |
| titleOfInvention | Silicon etching method |
| abstract | The present invention improves the etching rate of silicon. According to the present invention, water having an amount of a dew point of 10 ° C to 40 ° C is added to the mixed gas of CF 4 and Ar of the fluorine-based raw material, and the plasma is formed under atmospheric pressure. The gas after plasma-forming is mixed with the ozone containing gas from the ozone generator 13, and reaction gas is obtained. The reaction gas contains 1% by volume or more of ozone, non-radical fluorine-based intermediates such as COF 2 , and 0.4% by volume or more of fluorine-based reactants such as HF, and contains fluorine atom number (F) and hydrogen atom number (H). The ratio is (F) / (H)> 1.8. This reaction gas is sprayed onto the silicon film 91 (object to be treated) having a temperature of 10 ° C to 50 ° C. |
| priorityDate | 2007-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.