http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101126124-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
filingDate 2005-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101126124-B1
titleOfInvention Cerium Oxide Slurry Composition with Improved Polishing Flatness
abstract Particularly useful for Chemical Mechanical Polishing (CMP) processes of the Shallow Trench Isolation (STI) process to form a semiconductor multilayer structure, improving dishing uniformity on silicon wafers to prevent dishing and erosion. A reducing chemical mechanical polishing slurry composition is disclosed. The slurry composition includes a cerium oxide abrasive, a polycarboxylic acid having a weight average molecular weight of 50,000 to 500,000 or a salt thereof, an alcohol compound, and water, and the content of the cerium oxide abrasive is 0.1 to 20% by weight based on the total slurry composition. The content of the polycarboxylic acid or its salt is 0.01 to 20% by weight, the content of the alcohol compound is 0.001 to 10% by weight. In addition, the pH of the slurry composition is preferably 5 to 10.n n n n Chemical mechanical polishing, STI process, slurry, dishing, erosion, polishing selectivity, polycarboxylic acids and salts thereof, alcohol compounds
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014011678-A1
priorityDate 2005-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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