| abstract |
In the present invention, the low dielectric constant film interconnection stacked structure 3 is formed in a laminated structure of the low dielectric constant film 4 and the wiring 5 in an area except the periphery of the upper surface of the silicon substrate 1. The peripheral side surface of the low dielectric constant film wiring laminated structure 3 is covered by the sealing film 15. Thereby, the low dielectric constant film 4 is a structure which does not peel easily. In this case, the lower protective film 18 is formed on the lower surface of the silicon substrate 1 to protect the lower surface from cracks and the like.n n n n Silicon substrate, low dielectric constant film, sealing film, laminated structure |