http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101110238-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32238 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2009-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101110238-B1 |
| titleOfInvention | Etching Method and Manufacturing Method of Semiconductor Device |
| abstract | The etching method which can enlarge the selectivity of a polysilicon film with respect to a silicon oxide film, and can suppress generation | occurrence | production of the recess in a silicon base material is provided. A hard mask film 38 having a gate oxide film 36, a polysilicon film 37, and an opening 39 is sequentially formed on the silicon substrate 35, and the polysilicon film 37 corresponding to the opening 39 is formed. In the wafer W in which the native oxide film 41 is formed in the trench 40 of the trench, the native oxide film 41 is etched until the polysilicon film 37 is exposed at the bottom of the trench 40. The pressure of the atmosphere was set to 13.3 Pa, the O 2 gas, the HBr gas, and the Ar gas were supplied to the processing space S2, and the frequency of the bias voltage was set to 13.56 MHz, thereby causing polysilicon by plasma generated from the HBr gas. The film 37 is etched to remove it completely. |
| priorityDate | 2008-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.