http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101085982-B1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-784
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
filingDate 2004-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2011-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101085982-B1
titleOfInvention Semiconductor device manufacturing method and cutting device for cutting semiconductor wafer
abstract In the plasma dicing process in which the semiconductor wafer 6 is divided into pieces by plasma, the SiO 2 layer 42 and the protective layer 43 formed to cover the active layer 43 form the wafer base layer 40. It is used as an etching stop layer for alleviating the difference of the etching rate in the 1st plasma dicing process of etching and cutting | disconnecting. Next, a second plasma dicing step of cutting the etch stop layer exposed by the first plasma dicing step into a plasma of the second plasma generating gas that can be etched at a high etching rate is performed, and the protective sheet is exposed to the plasma for a long time. It can prevent the heat damage caused whenn n n n Semiconductor, Plasma, Etching, Dicing
priorityDate 2003-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID17358
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527022

Total number of triples: 25.