http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101085721-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1063 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2009-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101085721-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | The present invention relates to a semiconductor device capable of improving interference between conductive patterns and a method of manufacturing the same.n n n The present invention includes a semiconductor including an insulating film formed on a semiconductor substrate, a conductive pattern formed higher than the insulating film inside the damascene pattern, and an interference prevention groove formed between the sidewall of the conductive pattern and the insulating film inside the damascene pattern. An element and a method of manufacturing the same are provided.n n n n Parasitic capacitance, interference phenomenon, insulation film, void |
| priorityDate | 2009-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.