http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101061621-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2009-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101061621-B1 |
| titleOfInvention | Plasma Etching Method and Computer Storage Media |
| abstract | Even when performing plasma etching with high anisotropy applied with a high bias voltage, the roughness of the surface and sidewalls of the ArF photoresist can be suppressed, and the occurrence of strain, LER, and LWR can be suppressed to form a pattern of a desired shape with high accuracy. A plasma etching method and a computer storage medium can be provided. A plasma etching method in which an SiN layer 104 or a silicon oxide layer formed on a substrate to be treated is etched by a plasma of a processing gas using the ArF photoresist layer 102 as a mask, wherein the processing gas is formed of at least CF 3 I gas. And a high frequency power having a frequency of 13.56 MHz or less to the lower electrode on which the substrate to be processed is mounted. |
| priorityDate | 2008-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.