| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2007-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101056199-B1 |
| titleOfInvention |
Plasma oxidation treatment method |
| abstract |
Within the treatment chamber of a plasma processing apparatus, using the processing gas containing oxygen and, O (1 D 2) the density of the radical 1 × 10 12 [㎝ -3] plasma treatment to oxidize the surface of the object to be processed by using a plasma or more To form a silicon oxide film. Between the plasma oxidation treatment, by the VUV monochrometer (63) by measuring the density of O (1 D 2) radicals in the plasma to compensate for the plasma processing condition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101316456-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101316464-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101382962-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101316504-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101316251-B1 |
| priorityDate |
2006-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |