http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101050989-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2009-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101050989-B1 |
| titleOfInvention | Atomic layer deposition apparatus |
| abstract | The atomic layer deposition apparatus includes: a metal source gas supply pipe disposed on one side of the wafer so as to extend over the entire surface of the wafer, wherein the source gas can be supplied from the first end to the second end; And an active gas supply tube disposed on one side of the wafer so as to extend over the entire surface of the wafer, wherein the active gas supply tube may be supplied with a source gas from the first end to the second end, wherein the active gas supply tube supplies an active gas active onto the wafer. A plurality of gas blow openings are provided for blowing, and the gas blow openings are arranged at increasingly reduced inter-opening distances as they move further from the first end to the second end of the active gas supply line.n n n n Atomic layer deposition apparatus, wafer, source gas, metal source gas supply pipe, active gas supply pipe |
| priorityDate | 2008-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.