http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101037308-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2004-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101037308-B1 |
| titleOfInvention | High-k dielectric material etching method and system |
| abstract | The present invention relates to a method of etching a high-k dielectric layer on a substrate in a plasma processing system. The high-k dielectric layer may comprise, for example, HfO 2 . The high-k dielectric layer etching method includes raising the temperature of the substrate to at least 200 ° C. (ie, typically at about 400 ° C.), introducing a process gas comprising a halogen containing gas, and introducing plasma from the process gas. Igniting and exposing the substrate to the plasma. The process gas may include a reducing gas, more in order to enhance the etch rate of HfO 2 on the Si and SiO 2. |
| priorityDate | 2003-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.