http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101026983-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
filingDate 2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2011-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101026983-B1
titleOfInvention Etching Composition of Thin Film Transistor Liquid Crystal Display
abstract The present invention relates to an etching composition of a thin film transistor liquid crystal display device, and more particularly to an etching composition of a thin film transistor liquid crystal display device including phosphoric acid, nitric acid, acetic acid, hydrochloric acid, phosphate, chlorine compound, azole compound, and water.n n n The etching composition of the present invention is Mo / Al, which is a gate wiring material constituting an amorphous indium tin oxide (ITO) and a thin film transistor (TFT) constituting a pixel electrode of a thin film transistor liquid crystal display using the same composition. -Nd double layer can be etched in a single process without undercut of Al-Nd, which is a lower layer, and excellent taper can be obtained, and at the same time, even for Mo single layer, source / drain wiring material There is an effect that can form a good profile.n n n n Wet etching, metal film for pixel electrode, amorphous ITO metal film, metal film for gate electrode, metal film for source / drain electrode
priorityDate 2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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