http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100976882-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2010-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100976882-B1
titleOfInvention Method for manufacturing semiconductor device and storage medium
abstract An object of the present invention is to obtain a good etching shape in etching an organic film formed on a substrate. n In the present invention, the silicon-containing film is etched by plasma to transfer the pattern of the pattern mask on the film, the step of removing the pattern mask to expose the surface of the silicon-containing film, and active species of oxygen in the plasma. Etching the surface of the organic film through the pattern of the silicon-containing film to form a recess, thereafter sputtering the silicon-containing film to form a protective film made of a silicon-containing material on the inner wall surface of the recess, and By performing the step of further etching in the depth direction through the pattern of the silicon-containing film by the active species of oxygen in the plasma, etching can be performed while protecting the sidewall of the concave portion from the active species of oxygen, thereby obtaining a good pattern shape.
priorityDate 2007-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002203852-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004342865-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060100092-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

Total number of triples: 22.