http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100973857-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100973857-B1 |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention relates to a method of manufacturing a semiconductor device to prevent the Hump phenomenon and the inverse narrow width effect (INWE) phenomenon by preventing the channel region doping concentration decrease adjacent to the trench top corner portion in manufacturing the STI device isolation film.n n n The semiconductor device manufacturing method of the present invention for this purpose, the step of sequentially forming a pad oxide film and a pad nitride film on a silicon substrate, forming a photoresist pattern defining a device isolation region on the pad nitride film, and the photoresist Exposing an isolation region of a silicon substrate through an etching process using a pattern as an etch mask, etching the exposed silicon substrate to form a trench, and removing the photoresist pattern, and forming the trench sidewalls and a bottom surface Forming an oxide film on the silicon nitride film, full-etching the pad nitride film to expose the silicon substrate of the trench top corner portion, and implanting the ion by using the pad nitride film as a self-aligned mask on the exposed trench top corner portion. Performing, and high density plasma deposition on the pad nitride film And forming a buried oxide by.n n n n Pad Nitride, Pullback, Isotropic Etching, Channel, Diffusion |
| priorityDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.