abstract |
The present invention relates to cleaning compositions suitable for cleaning microelectronic structures comprising copper or aluminum wiring and silicon dioxide, low-k dielectrics and high-k dielectrics, which are capable of hydrogen bonding, A polar organic solvent selected from the group consisting of dimethylpiperidone, sulfone, and sulphonane; A component selected from the group consisting of tetraalkylammonium hydroxide, choline hydroxide, sodium hydroxide, and potassium hydroxide; water; And a chelating agent or metal complexing agent selected from the group consisting of trans-1,2-cyclohexanediamine tetraacetic acid, ethane-1-hydroxy-1,1-diphosphonate and ethylenediaminetetra (methylenephosphonic acid) .n n n Cleaning, microelectronics, substrate |