| abstract |
The present invention relates to articles produced by the PVD method, which consist of planar parallel structures having a thickness range of 20 to 2000 nm and having small dimensions of less than 1 mm. It is made by condensing silicon nitrite onto a carrier which passes through an evaporator. The carrier is precoated and the silicon nitrate is then condensed by PVD method using a soluble inorganic or organic separator. All steps, including dissolving and separating the product, can be carried out continuously and simultaneously in different locations. As a final step, SiO y can be converted to SiC at the surface of the planar parallel structure in a carbon containing gas at 500 to 1500 ° C. Products produced in this way are characterized by high uniformity of thickness. n n n Nitrous oxide, silicon dioxide, silicon carbide, silicon nitride, SiOz layer, planar parallel structure, planar parallel pigment, carbon treatment process, dielectric material, high molecular weight organic material, PVD, pigment, cosmetics |