http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100940017-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J5-18 |
| filingDate | 2008-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100940017-B1 |
| titleOfInvention | Insulating film material, multilayer wiring and method for manufacturing same, and method for manufacturing semiconductor device |
| abstract | The present invention provides a dielectric film having a low dielectric constant, which can be suitably used for the formation of an insulating film having excellent damage resistance such as etching resistance, chemical resistance, and the like, a multilayer wiring capable of reducing parasitic capacitance between wirings, and an efficient manufacturing method thereof, and An object of the present invention is to provide an efficient manufacturing method for a high speed and high reliability semiconductor device.n n n In order to solve the problem, the insulating film material of the present invention contains at least a silicon compound having a three-dimensional structure represented by the following structural formula (1).n n n n n n n n However, in said structural formula (1), R < 1> , R < 2> , R < 3> and R < 4> may be mutually same or different, and at least 1 of these shows the functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.n n n n Multilayer wiring, insulating film material, three-dimensional structure silicon compound |
| priorityDate | 2007-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.