http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100927691-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100927691-B1 |
| titleOfInvention | Dry etching method of HIgｈ-ｈ film |
| abstract | SUMMARY OF THE INVENTION An object of the present invention is a high-k film having high etching characteristics such that the etching rate difference due to the swelling and tightness of the pattern and the shape difference are small while maintaining a high selectivity (ratio) with the underlying polysilicon film. It is to provide a dry etching method of a film. The high-k film was dry-etched using plasma, and a fluorocarbon gas having a high carbon element ratio was minutely added to the BCl 3 gas mixed with the rare gas. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018075-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101312473-B1 |
| priorityDate | 2007-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.