http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100906307-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2002-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100906307-B1 |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, which forms a buffer layer having a predetermined composition of two metals between a barrier metal layer and a main metal layer to enhance adhesion and to manufacture a semiconductor device that can prevent porosity by relieving thermal stress. Provide a method. n n n n Dual damascene structure, barrier layer, buffer layer, thermal stress |
| priorityDate | 2002-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.