http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100899726-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100899726-B1 |
| titleOfInvention | How to improve the starting layer for low-k dielectric films by digital liquid flow meters |
| abstract | A method for depositing a low dielectric constant film by flowing an oxidizing gas into a processing chamber, comprising: flowing an organosilicon compound from a bulk storage vessel to a vapor injection valve via a digital liquid flow meter at an organosilicon flow rate, vaporizing the organosilicon compound and Flowing the organosilicon compound and carrier gas into a processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, and conducting the porogen compound from a bulk storage vessel through a digital liquid flow meter to a vaporization injection valve at a porogen flow rate. Flowing, vaporizing the porogen compound and flowing the porogen compound and carrier gas into a processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and porogen containing organic Silicate dielectric layer And a step of maintaining the second organosilicon flow rate and the second flow rate for chakhagi porogen. |
| priorityDate | 2006-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 116.