http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100858102-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 2005-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100858102-B1 |
| titleOfInvention | Plasma Generator |
| abstract | The present invention includes a plasma generating chamber (10) and a high frequency antenna (1) installed in the chamber 10, and plasma generation to generate an inductively coupled plasma by applying high frequency power from the antenna (1) to the gas in the chamber (10). Device. For this purpose, the antenna 1 branches electrically in parallel from the first part 11 (power connection) extending from the outside of the seal 10 into the seal 10 and from the inner end 11e of the seal of the first portion 11. The terminal 12e is a low inductance antenna composed of a plurality of second portions 12 (connection portions) directly connected to the inner wall of the seal 10 grounded. The surface of the antenna 1 is covered with an electrically insulating material. The frequency of the high frequency power applied to the antenna may be as high as about 40 MHz to about 100 MHz, and a desired plasma can be generated by suppressing disadvantages such as abnormal discharge and mismatch. It can also be configured to be able to perform a process such as film formation. |
| priorityDate | 2004-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.