http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100855323-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100855323-B1 |
| titleOfInvention | Process chamber and plasma processing unit |
| abstract | A process chamber and a plasma processing apparatus including the same are disclosed. The process chamber includes a sidewall defining an interior space and a liner disposed adjacent the inner wall and having a coated surface coated with a material comprising silicon. The plasma processing apparatus further includes a plasma generating unit for generating a plasma inside the process chamber by providing an electric field at one side of the process chamber together with the process chamber mentioned. Therefore, the silicon fluoride-based gas used as the etching gas reacts with the silicon coated on the liner, thereby lowering the concentration of the fluorocarbon-based gases. Thus, the plasma processing apparatus may prevent the efficiency of the etching process from being lowered by the fluoride-based gases. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104733273-A |
| priorityDate | 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.