http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100854609-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2002-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100854609-B1 |
| titleOfInvention | Feature etching method |
| abstract | A method is provided for etching a feature in an integrated circuit wafer. A wafer comprising one or more dielectric layers is disposed in the reaction chamber. An etchant gas comprising a hydrocarbon additive and an active etchant is introduced into the reaction chamber. Plasma is formed from the etchant gas in the reaction chamber. This feature is etched in at least a portion of the dielectric layer. Several sources of suitable hydrocarbons are considered suitable for the implementation of the present invention. This source includes, but is not specifically limited to, ethylene (C 2 H 4 ), ethane (C 2 H 6 ) and methane (CH 4 ). |
| priorityDate | 2001-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.