http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100851455-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-022 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2000-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100851455-B1 |
| titleOfInvention | How to reduce process sensitivity to chamber conditions |
| abstract | Methods and apparatus are provided for reducing the sensitivity of semiconductor processing to chamber conditions. The process reliability of a typical process is affected by changes in surface conditions that alter the rate of recombination of the treatment compound to the chamber surface. In one aspect of the invention, the composition of the one or more etchant is selected to maximize etch performance and reduce deposition on the chamber surface. One or more etchantes achieve etch reliability by controlling chamber surface conditions to minimize etch rate changes due to different surface conditions and different recombination rates of free radicals by minimizing deposition on the chamber surface. In another embodiment, the etchant chemistry is adjusted to reduce the change in internal conditions after the cleaning cycle. In another embodiment, the treatment process is selected to reduce the sensitivity of the etch process to chamber conditions. In another embodiment, the chamber surface material is selected to minimize the difference in free radicals on the surface material and the recombination rate of the incidental deposits formed on the material during the treatment process. |
| priorityDate | 1999-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.