http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100842923-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_717c792fca7cc9c290c9db33e8fe078b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-1409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B9-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B9-02 |
| filingDate | 2007-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7282207e0d916b9defce82cf3431ea62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_320b8dd561a62e5d37e0a4ef415dbafe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22afeaecd6f84bc9e0847c1875fde071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f2fd7828451ddd55a0395702c8d5cde http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bbfb3f22bcb332210d658cb1d0a1a09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cf2b8d9120d978a67390fbb6b729022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5150548732b17f0a0fbdc005a7da0ed9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_406169461c7542731aa09ff2f455df5a |
| publicationDate | 2008-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100842923-B1 |
| titleOfInvention | Method for manufacturing an incremental semiconductor probe using sidewall region and anisotropic wet etching and information storage device using the same |
| abstract | The present invention relates to a method for manufacturing an increased semiconductor probe using sidewall regions and anisotropic wet etching, and an information storage device using the same. The present invention relates to a method for improving the reliability of a device in mass production by reducing the influence of process variables on the device performance. It is possible to improve the device performance by solving the factors that previously hindered the measurement sensitivity.n n n According to the present invention, a method of manufacturing an increased semiconductor probe according to the present invention includes: (a) forming a first etching mask pattern for forming a tip portion in a first direction on a silicon substrate, and forming sidewall regions on both sides thereof; Forming; (b) anisotropically etching the silicon substrate using the sidewall regions to form both inclined surfaces of the probe; (c) implanting impurities into the sidewall regions as a mask to form source and drain regions on the silicon substrate and then removing the sidewall regions; (d) forming source and drain regions on both inclined surfaces of the probe by using the first etch mask pattern as a mask, and then removing the first etch mask pattern; (e) forming a second etching mask pattern on the tip of the probe to form a tip of the probe in a second direction; (f) forming space layers on both sides of the second etching mask pattern; And (g) removing the space film after etching the silicon substrate to a predetermined depth by a photo and etching process using the space film. |
| priorityDate | 2007-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.