| abstract |
In the plasma processing apparatus, as the material of the plasma processing apparatus electrode member 17 mounted on the front surface of the gas supply port of the plasma generating electrode, the ceramic frame portion 18a containing alumina is continuous in a three-dimensional mesh structure. Using the three-dimensional ceramic porous body, the gas for plasma generation is passed through a hole portion 18b irregularly formed in the three-dimensional network structure. Therefore, it is possible to make the distribution of the supplied gas uniform, to prevent abnormal discharge, and to perform uniform etching without variation. n n n n Plasma, semiconductor device, 3D network structure |