http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100836697-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-0554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-0315 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C22-63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-0041 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C22-63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
filingDate | 2003-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2008-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2008-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100836697-B1 |
titleOfInvention | Plasma Etching Method |
abstract | The plasma etching method is used for etching a substrate, the substrate comprising at least one resin layer and a copper layer covering at least one surface of the resin layer, wherein the copper layer is At least one opening portion having a surface exposed to the outside and penetrating the resin layer from the surface is included. This plasma etching method is a step of contacting the surface of the copper layer with a chemical agent capable of oxidizing copper and forming an oxide layer on the surface thereof, and using a gas containing oxygen as a plasma to face the opening by a gas plasma etching method. Removing the resin.n n n n Plasma Etching, Opening, Reduction, Oxygen |
priorityDate | 2002-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.