Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6723 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2000-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2008-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2008-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100824484-B1 |
titleOfInvention |
Method and apparatus for treating seed layer of copper connection |
abstract |
The present invention relates to a method of forming a semiconductor interconnect in a dielectric layer, the method comprising depositing a copper seed layer over the dielectric layer and over a boundary layer formed in the etched form of the dielectric layer, after which the copper seed layer is Processed to remove the oxidized layer from above the copper seed layer, the method is then moved to electroplat a copper filled layer over the treated copper seed layer, with the copper filled layer filling the etched form of the dielectric layer. |
priorityDate |
1999-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |