http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100808049-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2000-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100808049-B1 |
| titleOfInvention | Metal mask etching of silicon |
| abstract | The present disclosure provides a method for etching trenches, contact paths, or similar features. The method requires the use of a metal comprising masking material in combination with a fluorine containing plasma etchant. The plasma feed gas comprises a compound comprising at least one fluorine such as NF 3 , CF 4 and SF 6 . Oxygen (O 2 ), or an oxygen containing compound, or hydrogen bromide (HBr), or a compound of the material may be added to the plasma feed gas. |
| priorityDate | 1999-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.