http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100806828-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67184 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2004-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100806828-B1 |
| titleOfInvention | Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment |
| abstract | A plasma chamber is provided for performing semiconductor wafer processing in a wafer track system. The processing chamber may be configured as a thermal stack in the wafer track cell to expose the semiconductor wafer surface to the processing plasma. Showerhead electrodes and wafer chuck assemblies may be located within the processing chamber to achieve plasma enhanced processing of semiconductor wafers. Various types of feed gas sources may be in fluid communication with the showerhead electrode to provide a gas mixture that forms the desired plasma. The flow of gases can be controlled by a controller and a series of gas control valves to form and introduce the preselected gas mixture into the processing chamber as a plasma exposed to the semiconductor wafer surface. The preselected gas mixture may be formed for different semiconductor wafer processing operations such as surface pretreatment and bottom anti-reflective coating (BARC) deposition. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102354368-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160021003-A |
| priorityDate | 2003-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.