| abstract |
A method of anisotropically and selectively removing dielectric thin film layers 102 and 103 from substrate layer 100 is disclosed, wherein dielectric layer is ion implanted 122 prior to wet etching. The method can be applied adjacent structures such as gate electrodes in a microelectronic structure and prevents undercutting of the dielectric material held between the gate electrode and the substrate layer, which can occur using more isotropic etching techniques.n n n n Thin film layer, ion implantation, wet etching, dielectric layer, undercutting |