| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2006-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81d3f86b980fc15d2d08c75666b92e4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26cbc151b7c32ea39037913b0968b37c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e5de61a587e8727e1d48c75bc1170f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0caa13ab779c55af3d5dc6f4bf883f67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab59f89faa5564521ddb2694f5f665c9 |
| publicationDate |
2008-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100806128-B1 |
| titleOfInvention |
Wiring structure of semiconductor device and forming method thereof |
| abstract |
Disclosed are a wiring structure for a semiconductor device and a method of forming the same. The insulating film filling the plurality of conductive structures is partially removed to form an opening that exposes a portion of the substrate. A barrier layer including a metal film and a nitride film is formed below the opening along the inner wall and the bottom surface of the opening and an upper surface of the insulating film, and a nitride film is formed above the opening. A conductive material is embedded in the opening surrounded by the barrier layer to form a metal plug. Accordingly, the barrier layer may be prevented from being damaged in the planarization process for forming the contact plug. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8530349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886274-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018101770-A1 |
| priorityDate |
2006-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |