http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100801253-B1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2007-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e69926f761f65baaaba17a635cdcf9b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_650fb057f3506034232d470089c4fe0b
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publicationDate 2008-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100801253-B1
titleOfInvention Insulation Dry Etching Method
abstract In the deep hole processing of an ellipse pattern, this invention performs high precision processing which improved the shortness of the short diameter side opening property resulting from the excessive deposition at the beginning of an etching.n n n To this end, in the present invention, in the insulating film dry etching method for processing a workpiece having an elliptic pattern mask using flow carbon gas, the etching step is divided into a first step and a second step from the start of etching, While setting the amount of polymer during etching less than the second step, the first step time is controlled according to the ellipticity of the elliptic pattern (ratio of the long diameter to the short diameter).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180123668-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102411668-B1
priorityDate 2006-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.