http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100786537-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100786537-B1 |
| titleOfInvention | Multiple Plasma Generation Sources Used in Semiconductor Substrate Process Chambers |
| abstract | The present invention relates to a multiple plasma generating source capable of simultaneously operating three plasma generating apparatuses in a process chamber for semiconductor manufacturing to form a high density plasma and a uniform film. The plasma source is an inductively coupled plasma (ICP) source and the plasma source on the side of the process chamber is a helicon plasma source and has a bias electrode inside the chuck on which the wafer is placed. It is done.n n n According to the present invention, by using a multi-plasma source, it is possible to control the uniformity of the high density plasma and the film, and to generate the low-temperature plasma and the low energy temperature, which can be used for the line width of the microcircuit.n n n n ICP, Helicon Plasma, Plasma, Deposition, Dry Etch |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102231371-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264211-B2 |
| priorityDate | 2006-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.