http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100783696-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13458 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2000-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100783696-B1 |
| titleOfInvention | Thin film transistor substrate for liquid crystal display device and manufacturing method thereof |
| abstract | A horizontal gate line including a gate line, a gate electrode, and a gate pad is formed of an aluminum-based conductive film on the insulating substrate. Next, a gate insulating film is formed, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. Subsequently, a conductive film of a double film made of chromium and an upper film of AlNd is stacked and patterned in order to form a data line including a data line, a source electrode, a drain electrode, and a data pad crossing the gate line. Next, after the protective layer is stacked, the mask is patterned by dry etching in a dry etching chamber together with the gate insulating layer in a photolithography process to form contact holes that expose the drain electrode, the data pad, and the gate pad, respectively. Subsequently, in the dry etching chamber, N 2 gas and Ar gas are mixed to form a plasma reaction layer on the AlNd surface of the drain electrode, the data pad, and the gate pad exposed through the contact hole. Subsequently, ITO or IZO is stacked and patterned to form pixel electrodes, auxiliary data pads, and auxiliary gate pads connected to the drain electrodes, the data pads, and the gate pads, respectively.n n n n Aluminum, ITO, IZO, Contact Characteristics, Plasma, Chamber |
| priorityDate | 2000-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.