http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100781719-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3432 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18344 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-30 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate | 2004-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100781719-B1 |
| titleOfInvention | Method for manufacturing hyperbolic drum type device using ion beam etching |
| abstract | The present invention provides a method for producing a hyperbolic drum-type device having a uniform size in the range of the active region (gain region or gain medium) in the range of several micrometers or less to several tens of nm using an ion beam etching method and thus It relates to a device manufactured from.n n n In the method of manufacturing a hyperbolic drum type device according to the present invention, an n-type semiconductor and a p-type semiconductor are joined on a substrate, and the epi layer has an active layer at a boundary between the n-type semiconductor and a p-type semiconductor and its region. Forming an epitaxial layer; And etching the epitaxy layer in the form of a hyperbolic drum to have a minimum diameter in the active layer by ion beam etching. Hyperbolic drum-type device manufactured by the manufacturing method according to the present invention has the advantage of being very uniform, good reproducibility and mass production.n n n n Hyperbolic drum type, ion beam etching, active layer, semiconductor laser, quantum dot |
| priorityDate | 2004-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID223 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559564 |
Total number of triples: 31.