http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100780832-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e71c17ec6e47dd48a6dd4f316d2c0fb5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb4893e346172714d535bda83a8c9c0 |
| publicationDate | 2007-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100780832-B1 |
| titleOfInvention | Dry etching method for zinc oxide |
| abstract | The present invention relates to a dry etching method for zinc oxide material (ZnO). In particular, the present invention relates to a dry etching method for a zinc oxide material comprising using a bromine-based gas and a hydrogen gas as an etching gas, and etching the ZnO material by plasmalizing the etching gas.n n n The ZnO material prepared according to the dry etching process of the present invention has a suitable etching rate by using a general photoresist without using a hard mask that involves a complicated process as a result, compared with conventional etching gases and etching conditions. It exhibits excellent etching characteristics such as a clean anisotropy etching profile without redeposition, and can be used for various optoelectronic devices as well as sensors using ZnO thin films, which are being actively studied recently, and large area TFT LCDs. Provide effect. |
| priorityDate | 2006-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.