http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100773011-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F- http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 2004-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100773011-B1 |
| titleOfInvention | Low-Activation Energy Silicon-Containing Resist Systems |
| abstract | The present invention provides a silsesquioxane polymer of the present invention, a resist composition containing such a silsesquioxane polymer, wherein at least a portion of the silsesquioxane polymer contains a fluorinated moiety, and the silsesquioxane polymer At least a portion of which contains a solubility inhibiting side chain acid-reactive moiety having low activation energy for acid-catalyzed cleavage, wherein the presence of high optical density is minimized or prevented. In addition, the polymers of the present invention may contain side chain polar moieties that promote alkali solubility of the resist in an aqueous alkaline solution. The polymers of the present invention are particularly useful in positive resist compositions. The present invention includes methods of using such resist compositions when forming patterned structures on substrates, in particular multilayer (e.g. bilayer) photolithographic methods, these methods having high resolution at wavelengths such as 193 nm and 157 nm. You can create an image. |
| priorityDate | 2003-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 76.