| abstract |
Provided is a method of manufacturing a semiconductor device in which the formed film is free of nitrogen while maintaining the function of the low dielectric constant insulating film. A low dielectric constant insulating film is formed by plasma-forming and reacting a film forming gas having a flow rate ratio of H 2 O to any one of silicon-containing organic compounds having a siloxane bond or a CH 3 group and adjusting the pressure to 1.5 Torr or more. Form. Thereafter, the low dielectric constant insulating film is brought into contact with a plasma of a processing gas containing at least one of He, Ar, H 2, or deuterium, or heated at a temperature of 400 ° C. or higher in an atmosphere of nitrogen gas or an inert gas. To form the barrier insulating film, and the flow ratio of H 2 O to the silicon-contained organic compound to 12 or more.n n n n Silicon-containing organic compounds, water, flow ratio, pressure. |