http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100770551-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2001-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100770551-B1 |
| titleOfInvention | Method of forming resist pattern with reduced development defect and composition for reducing development defect |
| abstract | On the chemically amplified photoresist film formed on a substrate of 8 inches or larger, a composition for reducing development defects, for example, made of an acidic composition containing a surfactant is applied. As a result, the surface of the resist is hydrophilized to prevent formation of a poorly soluble layer for a developer on the surface of the resist, and a film of a chemically amplified photoresist after exposure and development by an appropriate amount of acid diffusion from the composition for reducing development defects. The amount of reduction in thickness is 10 kPa to 500 kPa larger than the case where the composition for reducing development defects is not applied, and a resist pattern without deterioration of pattern shapes such as T-tops and round tops is formed. n n n Chemically amplified photoresist, resist pattern, composition for reducing development defect, surfactant, fluorine. |
| priorityDate | 2000-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.