http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100756704-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2001-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100756704-B1 |
| titleOfInvention | Self-Enhanced Plasma Etching Method Using Carbon Difluorocarbon Etching Gas |
| abstract | An oxide etch process was performed in a magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas contains approximately the same amount of hydrogen-free fluorocarbon and oxygen, most preferably C 4 F 6 , and contains much larger amounts of argon dilution gas. Preferably, the magnetic field is maintained above about 50 gauss, the pressure above 40 millitorr and the chamber residence time is below 70 milliseconds. A two-step process may be applied to etch very large aspect ratio holes. In the second step, the magnetic field and oxygen flow are reduced. It may also be replaced by other fluorocarbons having an F / C ratio of 2 or less, more preferably 1.6 or 1.5. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11613068-B2 |
| priorityDate | 2000-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.