http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100754369-B1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3163957db744d0171ae3ff8ab14f0d5 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2037 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2007-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_145e48bcf473c6ed754cebda26f7bdbf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b124ba9d45ea81d5651fc090e725cd01 |
publicationDate | 2007-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100754369-B1 |
titleOfInvention | Method of forming a predetermined pattern on a substrate by direct etching using a neutral particle beam |
abstract | In the present invention, a method of forming a predetermined pattern on a substrate by direct etching using a neutral particle beam is provided. According to the invention, a) passing the neutral particle beam through a mask having a predetermined pattern, b) directly contacting the neutral particle beam passing through the mask with a substrate not coated with photoresist, and c) the Removing the material forming the substrate from the substrate surface in contact with the neutral particle beam by direct etching, thereby forming a negative pattern in the region in contact with the neutral particle beam, by direct etching with the neutral particle beam. A method of forming a predetermined pattern on a substrate is provided. The above method forms a desired pattern directly on the substrate without performing any of the processes usually performed to form a predetermined pattern on the substrate, for example, photoresist application, exposure, development, photoresist removal processes. It has the advantage of being able to. In addition, the method has problems in the method of placing the shield directly in contact with the surface of the substrate by using a mask that does not directly contact the substrate, in particular, the difficulty of the regular arrangement of the shield and damage to the substrate by the shield, etc. Has the advantage to solve. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114927410-A |
priorityDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.