http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100752940-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2001-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100752940-B1 |
| titleOfInvention | Method of fabricating a void metallization configuration that reduces the intermetallic capacity of interconnect structures |
| abstract | The present invention relates to a method of making a metallization scheme having an air gap formed by evaporating a filled polymer material. The filler material is covered by the critically permeable dielectric layer. The method begins by forming spaced conductive lines on a semiconductor structure. The spaced conductive lines have upper surfaces. Filler material is formed on the spaced conductive lines and the semiconductor structure. The filler material consists of a material selected from the group consisting of polypropylene glycol (PPG), polybutadiene (PB) polyethylene glycol (PEG), fluorinated amorphous carbon and polycaprolactone diol (PCL), and is used in spin-on or CVD processes. It is preferably formed by. The filler material is etched back to expose the top surfaces of the spaced conductive lines. Next, the semiconductor structure is loaded into the HDPCVD chamber. In an important step, a transparent dielectric layer is formed on the filler material. The permeable dielectric layer has a property that allows the decomposed gaseous filler material to diffuse through it. In another important step, the filler material is evaporated to change to gaseous filler material. This gaseous filler material diffuses through the transparent dielectric layer to form a gap between the spaced conductive lines. An insulating layer is formed on the transparent dielectric layer.n n n n Permeable Dielectric Layer, Filler Material, Insulation Layer, Gap, Semiconductor Structure, Spaced Conducting Wire |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101062566-B1 |
| priorityDate | 2000-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.