http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100750081-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 2001-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100750081-B1 |
| titleOfInvention | How to selectively etch undoped silicon dioxide and doped silicon dioxide on silicon nitride |
| abstract | The present invention relates to an etchant comprising a component of formula C 2 H x F y , wherein x is an integer from 2 to 5, y is an integer from 1 to 4, and x + y is 6. The etchant of the present invention selectively etches doped silicon dioxide on both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride can be used as an etch stop layer in a dry etching method using a C 2 H x F y containing etchant. C 2 H x F y can be used as the base etchant or as an additive in another etchant or etchant mixture. Also described is a semiconductor device 10 that includes a structure patterned by the etchant of the present invention or in accordance with the method of the present invention. Specifically, the present invention includes a doped silicon dioxide structure 24 having substantially vertical sidewalls 34 and an adjacent undoped silicon dioxide or silicon nitride structure 36 exposed adjacent the sidewalls 34. The semiconductor device 10 is included.n n n n Semiconductor device, silicon dioxide, silicon nitride, mask material, patterning, etching agent, etching stop layer, ore plate printing, semiconductor device. |
| priorityDate | 2000-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.